Lattice defects in these wurtzite crystals were studied by means of the high-resolution electron microscopy of samples which had been pulverized at room temperature. High densities of stacking faults were produced in BeO and GaN. The dissociation of basal dislocations was observed in BeO by using the weak-beam technique. Dissociated and undissociated 60° dislocations were observed in ZnO, AlN and InN by means of high-resolution lattice imaging. The stacking fault energies were estimated, from the separation of partials, to be equal to 0.10J/m2 in ZnO, 0.041J/m2 in BeO, 0.22J/m2 in AlN and 0.041J/m2 in InN. The stacking fault energies in wurtzite crystals were related to the c/a ratios of the crystals.

High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals. K.Suzuki, M.Ichihara, S.Takeuchi: Japanese Journal of Applied Physics, 1994, 33[I-2], 1114-20