The effect of charged dislocations upon the scattering of electromagnetic radiation in an impurity semiconductor crystal was studied. The cross-sections were determined for radiation scattering from clouds of electron-hole plasma which surrounded dislocations in the crystal. A relationship was derived which permitted the dislocation density in the scattering crystal to be deduced from the intensity of the spot in the central maximum of the observed diffraction pattern.

Diffraction of Electromagnetic Radiation from a Semiconductor Crystal with Charged Dislocations. S.G.Gestrin, F.M.Zadorozhnyi, A.N.Salnikov: Optics and Spectroscopy, 1997, 83[3], 417-9. See also: Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, 1998, 41[2], 75-9 (Russian Physics Journal, 1998, 41[2], 156-60) and Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, 1998, 41[4], 92-5 (Russian Physics Journal, 1998, 41[4], 174-7)