The electrical activities of stacking faults and partial dislocations in 4H-SiC homo-epitaxial films were investigated by using the electron-beam-induced current technique. The basal plane dislocation was dissociated into Si(g)30º and C(g)30º partials under electron-beam irradiation, with a stacking fault formed in between. The stacking fault exhibited bright contrast at room temperature and dark contrast at 50K in electron beam induced current images. The reasons were discussed according to the quantum-well state of stacking faults. C(g)30º partial was always more electrically active than Si(g)30º partial at each specific accelerating voltage. The electron beam induced current contrasts of the two partials were discussed with the number of recombination centers.

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-SiC Homo-Epitaxial Films. B.Chen, J.Chen, T.Sekiguchi, T.Ohyanagi, H.Matsuhata, A.Kinoshita, H.Okumura, F.Fabbri: Superlattices and Microstructures, 2009, 45[4-5], 295-300