Intrinsic stacking faults in the (111) plane of SiC, which were closed by two Shockley partial dislocations, were observed using high-resolution electron microscopy. The energy of the intrinsic stacking-fault of SiC was determined experimentally to be 34mJ/m2; compared with the theoretical value (Denteneer et al. 1987) of 12mJ/m2.

Experimental Determination of the Intrinsic Stacking-Fault Energy of SiC Crystals. X.G.Ning, H.Q.Ye: Journal of Physics- Condensed Matter, 1990, 2[50], 10223-5