The first results of in situ characterization of nitrogen vacancy-center formation in single-crystal diamonds after implantation of low-energy nitrogen ions (7.7keV), co-implantation of hydrogen, helium and carbon ions and in situ annealing were presented. Diamond samples were implanted either at room temperature or at 780C. It was found that dynamic annealing during co-implantation enhances nitrogen vacancy-center formation by up to 25%.

In situ Optimization of Co-Implantation and Substrate Temperature Conditions for Nitrogen-Vacancy Center Formation in Single-Crystal Diamonds. J.Schwartz, P.Michaelides, C.D.Weis, T.Schenkel: New Journal of Physics, 2011, 13[3], 035022