Annealing and diffusion behaviour of implanted silver in 6H-SiC was investigated using Rutherford back-scattering spectroscopy, channelling, Raman spectroscopy and scanning electron microscopy techniques. Silver (109Ag+) ions with an energy of 360keV were implanted in SiC to a fluence of 2 x 1016 cm−2 at room temperature (23C), 350 and 600C. After implantation the samples were annealed at temperatures up to 1400C. The results revealed that implantation at room temperature created an amorphous layer of about 270nm from the surface while implantation at 350 and 600C retained a crystalline structure with more damage created for 350C implantation compared to 600C. Diffusion of implanted Ag accompanied by loss from the surface started at 1300C in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss was presented.

Annealing of Silver Implanted 6H-SiC and the Diffusion of the Silver. T.T.Hlatshwayo, J.B.Malherbe, N.G.Van der Berg, L.C.Prinsloo, A.J.Botha, E.Wendler, W.Wesch: Nuclear Instruments and Methods in Physics Research B, 2012, 274, 120-5