A computer simulation method was used to simulate the growth of a face-centered cubic (111) crystal surface at which emerged a stacking fault, two types of twin lamella bounded by two partial dislocations and a dipole screw dislocation. A comparison was made of the stacking fault mechanism, the twin lamella mechanism and the screw dislocation mechanism. It was found that the screw dislocation mechanism was more active than the others at low supersaturations. The values of the critical supersaturations under which the screw dislocation mechanism was more active than the twin lamella mechanism were obtained for various temperatures. The critical supersaturation increased as the temperature was lowered.

Comparison among the Growth Mechanisms of Stacking Fault, Twin Lamella and Screw Dislocation: a Monte Carlo Simulation. H.Li, X.Peng, N.Ming: Journal of Crystal Growth, 1995, 149[3-4], 241-5