Crystallographic, electronic, and energetic analyses of the (2,33) [Zhadanov’s (2,3,3,3)] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, were presented. The defect was identified by means of spatially resolved microphotoluminescence (μ-PL) measurements at different emission wavelengths, focusing on the emission peak at 0.3eV below the conduction band. Low temperature μ-PL measurements have also been performed. The defect was identified and characterized using high resolution transmission electron microscopy. Experimental results were correlated and validated by the calculations of the Kohn–Sham electronic band structure and the defect formation energy.

Structural and Electronic Characterization of (2,33) Bar-Shaped Stacking Fault in 4H-SiC Epitaxial Layers. M.Camarda, A.Canino, A.La Magna, F.La Via, G.Feng, T.Kimoto, M.Aoki, H.Kawanowa: Applied Physics Letters, 2011, 98[5], 051915