Free standing 3C–SiC (111) samples with differently oriented twin boundaries were prepared using on-axis and slightly off-axis 6H–SiC substrates. The orientation of twin boundaries causes either an enhancement or suppression of the magnetoresistance mobility. The origin of carrier mobility difference was attributed to the specific structure of these defects. The height of the barriers created by twin boundaries was found to be 0.2eV.

Influence of Twin Boundary Orientation on Magnetoresistivity Effect in Free Standing 3C–SiC. R.Vasiliauskas, A.Mekys, P.Malinovskis, M.Syväjärvi, J.Storasta, R.Yakimova: Materials Letters, 2012, 74, 203–5