(11•2) GaN layers were grown by metal-organic vapour phase epitaxy on (11•2) bulk GaN substrates and (10•0) sapphire substrates. The growth temperature was varied between 950 and 1050C and the total reactor pressure between 50 and 600mbar. The growth conditions show a strong impact on the yellow band luminescence properties, while weak impact on the threading dislocation density was observed. The layer morphologies exhibit undulations with two periods along GaN [1¯1•0] and one period along [11•¯3]. The different period lengths were connected to anisotropic adatom surface diffusion lengths. Arrow like features on the surface originate from the interference of the undulations along [11•¯3] and [1¯1•0].

Surface Diffusion and Layer Morphology of ((11¯22)) GaN Grown by Metal-Organic Vapour Phase Epitaxy. S.Ploch, T.Wernicke, D.V.Dinh, M.Pristovsek, M.Kneissl: Journal of Applied Physics, 2012, 111[3], 033526