Simulations were made of the solution growth of gallium nitride and the diffusion behaviour of nitrogen atoms on growth surfaces was investigated using molecular dynamics simulations. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were found to be about 3.5 times larger than those on the N-face.

Molecular Dynamics Simulation of Diffusion Behaviour of N Atoms on the Growth Surface in GaN Solution Growth. T.Kawamura, Y.Kangawa, K.Kakimoto, Y.Suzuki: Journal of Crystal Growth, 2012, 351[1], 32-6