Using transmission electron microscopy techniques, extended defects of interstitial and vacancy types were found after H implantation and annealing. The effects, upon these populations of defects, of boarding or sandwiching GaN between strained superlattices were analyzed statistically. The possibility of using compressively strained layers to localize and favour the precipitation of vacancy-type defects in GaN was demonstrated. The source of excess vacancies, the mechanism responsible for the cavity localization, and the drastic increase of their volume fraction were considered.

Confinement of Vacancies during Annealing of H Implanted GaN Sandwiched between Two InGaN/GaN Superlattices. N.Cherkashin, A.Claverie, D.Sotta, J.M.Bethoux, L.Capello, O.Kononchuk: Applied Physics Letters, 2012, 101[2], 023105