The production of high quality semipolar (11•2) GaN layers on sapphire obtained using asymmetric epitaxial lateral overgrowth method was investigated. This type of epitaxial lateral overgrowth led to efficient blocking of the basal stacking faults in the bulk, and enables the formation of non-defective layers at the surface. The basal stacking faults terminate due to generation of prismatic stacking faults along a well defined boundary. The corresponding intensity of GaN band edge photoluminescence emission was increased by more than four orders of magnitude in comparison to that from semipolar templates.

Efficient Blocking of Planar Defects by Prismatic Stacking Faults in Semipolar (11¯22)-GaN Layers on m-Sapphire by Epitaxial Lateral Overgrowth. B.Lacroix, M.P.Chauvat, P.Ruterana, G.Nataf, P.de Mierry: Applied Physics Letters, 2011, 98[12], 121916