A new and effective methodology was proposed for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect resulted in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H+ and mobile hydroxyl (OH−) ions were generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal-oxide-based resistive-switching random access memory devices.

Defect Engineering: Reduction Effect of Hydrogen Atom Impurities in HfO2-Based Resistive-Switching Memory Devices. S.Kim, D.Lee, J.Park, S.Jung, W.Lee, J.Shin, J.Woo, G.Choi, H.Hwang: Nanotechnology, 2012, 23[32], 325702