Thin films were deposited by dc-ion beam sputtering at different oxygen partial pressures and different substrate temperatures. In order to investigate, how these two parameters influence the atomic structure, the specimens were characterized by X-ray diffraction and transmission electron microscopy. Electrochemical characterization of the films was done by cyclic voltammetry and chrono-potentiometry. To determine an averaged chemical diffusion coefficient of lithium, a method was developed, evaluating c-rate tests. The results obtained by this method were compared to results obtained by the well established galvanostatic intermittent titration technique, which was used to determine a concentration dependent diffusion coefficient of lithium in LTO.

Lithium Diffusion in Sputter-Deposited Li4Ti5O12 Thin Films. F.Wunde, F.Berkemeier, G.Schmitz: Journal of Power Sources, 2012, 215, 109-15