Amorphous Zn and ZnO thin films were prepared by radio frequency magnetron sputtering on Cu substrates and were characterized by X-ray diffraction, scanning electron microscope, and Raman spectroscopy. The electrochemical performance of the thin films was studied by galvanostatic cycling and cyclic voltammetry. The voltage dependence of Li-ion chemical diffusion coefficients, DLi, of the films was determined by galvanostatic intermittent titration technique and electrochemical impedance spectroscopy. It was found that the amorphous Zn and ZnO films exhibit almost the same DLi values ranging from 10-14 to 10-12cm2/s and similar Li-ion transport characteristics determined both by galvanostatic intermittent titration technique and by EIS methods.

Determination of Li-Ion Diffusion Coefficient in Amorphous Zn and ZnO Thin Films Prepared by Radio Frequency Magnetron Sputtering. J.Xie, N.Imanishi, A.Hirano, Y.Takeda, O.Yamamoto, X.B.Zhao, G.S.Cao: Thin Solid Films, 2011, 519[10], 3373–7