The enhancement by Cu doping of the Cd self-diffusivity in CdTe (Ahmed et al 1996) was accounted for by enhanced concentrations of both Cdi and Cd•i. The possible contribution of the Cd•i required confirmation by more precise experimental data. It was also concluded that in the Cu doping experiments a fraction of the ionized Cu acceptor was in a neutral state. A review of high-temperature Hall measurements of n, the free electron concentration, as a function of Cd pressure and of the relaxation of n following a step change in Cd pressure showed that any contribution of VTe to the electro-neutrality condition in Cd-rich undoped CdTe as proposed by Fochuk et al (2006) was not supported by the evidence. The relaxation data provided values for the diffusivity of the Cd•i between 500 and 900C.

The Diffusivity of the Cd Interstitial in CdTe. D.Shaw: Semiconductor Science and Technology, 2012, 27[3], 035003