A transmission electron microscopy study was made of dislocations and interfaces in CdTe solar cells. The atomic structure of dislocations formed within CdTe grains were determined by atomic-resolution transmission electron microscopy. The electronic properties of the dislocations were considered and the effects of oxygen upon interdiffusion at CdS/CdTe interface were explored. It was found that the presence of oxygen in either CdS or CdTe suppressed interdiffusion at the CdS/CdTe interface. Further investigations were made of interdiffusion at the CdS/Zn2SnO4 interface. It was found that Zn diffused into CdS from Zn2SnO4 and Cd diffused into Zn2SnO4 from CdS. The possible effects of the interdiffusion were discussed. Finally, the distribution of intentionally introduced Cu at the CdTe/CdS junction was examined and it was found that Cu was distributed uniformly in the CdS layer.

Transmission Electron Microscopy Study of Dislocations and Interfaces in CdTe Solar Cells. Y.Yan, K.M.Jones, M.M.Al-Jassim, R.Dhere, X.Wu: Thin Solid Films, 2011, 519[21], 7168-72