Deformation-induced defects were studied in semi-insulating CdTe and CdZnTe by infra-red photoluminescence and these data were compared with earlier results. A direct correlation between Y-emission and dislocation density in both compounds was confirmed. The Y-band intensified near to indenter deformation or near to a scribing line, but was barely visible in low-dislocation areas (etch pit density <2 x 105/cm2). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important mid-gap level EC-0.74eV in CdTe and Cd1−xZnxTe (x < 0.1). The findings demonstrated that dislocation-induced defects could degrade charge collection in radiation detectors.

Dislocation-Induced Electronic Levels in Semi-Insulated CdTe. V.Babentsov, V.Boiko, G.A.Schepelskii, R.B.James, J.Franc, J.Procházka, P.Hlídek: Nuclear Instruments and Methods in Physics Research A, 2011, 633[1], S81-2