Small area CdTe/CdS solar cells were fabricated using chemical bath-deposited CdS and CSS-deposited CdTe thin films to investigate the interface properties related to the CdS processing. The effect of post-deposition annealing of CdS on the junction properties and the possible interdiffusion at the interface was discussed. The hypothesis of hardening of CdS due to annealing against the diffusion of S and Te was discussed using the quantum efficiency data in the blue and red regions. Devices prepared using as-deposited CdS films showed evidence of higher S and Te diffusion compared to devices made using CdS films annealed in oxygen. The maximum efficiency of the devices used here was 9.8%.

CdS Thin Film Post-Annealing and Te-S Interdiffusion in a CdTe/CdS Solar Cell. X.Mathew, J.S.Cruz, D.R.Coronado, A.R.Millán, G.C.Segura, E.R.Morales, O.S.Martínez, C.C.Garcia, E.P.Landa: Solar Energy, 2012, 86[4], 1023-8