An EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires was presented. Mn doping was obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, it was observed that Mn forms chemical bonds with As but was not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn was mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, the presence of Mn was found in a MnAu intermetallic compound.

The Mn Site in Mn-Doped GaAs Nanowires: an EXAFS Study. F.d'Acapito, M.Rovezzi, F.Boscherini, F.Jabeen, G.Bais, M.Piccin, S.Rubini, F.Martelli: Semiconductor Science and Technology, 2012, 27[8], 085001