A one-dimensional diffusion model was used to investigate the transport of nitrogen during the liquid-phase epitaxial growth of InAsN layers from Bi and In solvents and GaAsN layers from Ga solvent. The concentration profile of nitrogen near the growing interface was obtained for the materials for different melt supercooling and cooling rates. Experimental results on the growth of InAsN layers from Bi solutions using the optimum growth parameters suggested by the study were shown.

Transport of Nitrogen Atoms during Liquid Phase Epitaxial Growth of InAsN and GaAsN. S.C.Das, S.Dhar: Semiconductor Science and Technology, 2011, 26[8], 085025