High-quality In0.3Ga0.7As and In0.51Ga0.49As epilayers were successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations were successfully contained and limited within the buffer layers designed to stop the elongation of threading dislocations into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A threading dislocation density of 106/cm2 in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As was done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer was shown.

Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by using Metal Organic Chemical Vapor Deposition. H.Q.Nguyen, E.Y.Chang, H.W.Yu, H.D.Trinh, C.F.Dee, Y.Y.Wong, C.H.Hsu, B.T.Tran, C.C.Chung: Applied Physics Express, 2012, 5[5], 055503