Spatio-time-resolved cathodoluminescence spectroscopy was implemented to assess the local carrier dynamics in a 70nm-thick very low threading dislocation density, pseudomorphic m-plane In0.05Ga0.95N epilayer grown on a free-standing GaN substrate by metalorganic vapour phase epitaxy. Although threading dislocation s or stacking faults were absent, sub-micrometer-wide zone patterns parallel to the c-axis and 2µm-long-axis figure-of-eight patterns parallel to the a-axis were clearly visualized in the monochromatic cathodoluminescence intensity images. Because the spatio-time-resolved cathodoluminescence measurement revealed very little spatial variation of low-temperature radiative lifetime, the considerable peak energy variation was interpreted to originate from non-identical In-incorporation efficiency for the growing surfaces exhibiting various mis-cut angles. The figure-of-eight patterns were ascribed to originate from the anisotropic, severe m-plane tilt mosaic along the a-axis of the GaN substrate, and the zone patterns might originate from the m-plane tilt mosaic along the c-axis.Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate. M.Kagaya, P.Corfdir, J.D.Ganière, B.Deveaud-Plédran, N.Grandjean, S.F.Chichibu: Japanese Journal of Applied Physics, 2011, 50[11], 111002