The current state of methods which eventually led to large area non- or semi-polar nitride structures was reviewed. The simplest approach was to use planar sapphire or SiC wafers of non-c-plane orientations on which potentially less polar GaN could be grown. However, typically huge dislocation and in particular stacking fault densities evolved. More sophisticated approaches made use of the good GaN growth performance in the c-direction, eventually leading anyway to large area non- or semi-polar structures. Several such approaches were considered.

Semipolar GaN Grown on Foreign Substrates: a Review. F.Scholz: Semiconductor Science and Technology, 2012, 27[2], 024002