Ga-deficient GaN epitaxial films were grown onto (00•1) sapphire substrates by using plasma-assisted molecular beam epitaxy and the experimental evidence for room-temperature ferromagnetic behaviour was considered. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300/cm in Raman spectra confirmed the existence of Ga vacancies. The X-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga was found to be >1. The ferromagnetism was believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.Experimental Evidence of Ga-Vacancy Induced Room Temperature Ferromagnetic Behavior in GaN Films. B.Roul, M.K.Rajpalke, T.N.Bhat, M.Kumar, A.T.Kalghatgi, S.B.Krupanidhi, N.Kumar, A.Sundaresan: Applied Physics Letters, 2011, 99[16], 162512