Antiphase domain structural properties in 20nm GaP/Si epilayers grown by molecular beam epitaxy were investigated quantitatively by using fast robust and non-destructive analysis methods. These analyses, including atomic force microscopy and X-ray diffraction, were applied to samples grown by various molecular beam epitaxy growth modes. Roughness, lateral crystallite size of the epilayer, ratio of antiphase domains and their relationship were discussed. It was shown that both these analysis methods were useful to clarify the physical mechanisms occurring during the heterogeneous growth. Low-temperature migration enhanced epitaxy was found to guarantee smoother surface than conventional molecular beam epitaxy. Effect of annealing temperature on antiphase boundaries thermodynamics was discussed. The modification of the thermodynamic equilibrium through a thermal activation of antiphase boundaries motion was expected to play an important role in the dynamic evolution of surfaces during thermal annealing and growth.

Thermodynamic Evolution of Antiphase Boundaries in GaP/Si Epilayers Evidenced by Advanced X-ray Scattering. W.Guo, A.Bondi, C.Cornet, A.Létoublon, O.Durand, T.Rohel, S.Boyer-Richard, N.Bertru, S.Loualiche, J.Even, A.Le Corre: Applied Surface Science, 2012, 258[7], 2808-15