Structural changes in GaSb (001) thin films upon low-energy electron (125keV) irradiation were studied by in situ transmission electron microscopy. No structural changes were observed for irradiation at room temperature. However, in a sample irradiated at 473K domains of {110} variant, rotated 90° from each other, were formed in the matrix. The average diameter of the domains was approximately 18nm in the sample irradiated to a fluence of 4.8  x  1024 electrons/m2. It was considered that the domains were pseudo-{110} planes in the matrix formed by electron-irradiation-induced Shockley partial dislocations.

Structural Changes Induced by Low-Energy Electron Irradiation in GaSb. N.Nitta, Y.Aizawa, T.Hasegawa, H.Yasuda: Philosophical Magazine Letters, 2011, 91[10], 676-81