In ion irradiated GaSb, InSb and Ge, the induced point defects form voids and these voids developed into the cells upon further irradiation. The nano-fabrication technique utilizing this behaviour was performed on (100) InSb by focused Ga+ ion beam. Fabrication of nano-cell lattices with cell an interval of 30-300nm were tried varying the acceleration voltage and the ion dose at room temperature, and the plan views and the cross-sectional views of the nano-cell structures were observed by scanning electron microscopy. The possible ranges of the cell interval, the cell diameter and the cell height were obtained from the results.

Nano-Cell Fabrication on InSb Utilizing Point Defects Behavior Induced by Focused Ion Beam. S.Morita, N.Nitta, M.Taniwaki: Surface and Coatings Technology, 2011, 206[5], 792-6