In GaSb/GaAs hetero-epitaxy, it was shown that a two-dimensional growth of GaSb promoted the generation of Lomer dislocations and confined the lattice mismatched strain at the hetero-interface. In contrast, 60° dislocations and closely spaced 60° pairs were predominantly generated in the three-dimensional growth mode. Consequently, a 60° dislocation glide model in combination with surface effects was able to account for the formation of Lomer, 60°, and 60° dislocation pair at high or low mismatch at hetero-interface between zinc-blende materials.

Growth Mode Dependence of Misfit Dislocation Configuration at Lattice Mismatched III-V Semiconductor Interfaces. Y.Wang, P.Ruterana, L.Desplanque, S.El Kazzi, X.Wallart: EPL, 2012, 97[6], 68011