In recent years germanium was emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study was to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium was interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering were discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces was addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices.

Impurity Diffusion, Point Defect Engineering, and Surface/Interface Passivation in Germanium. A.Chroneos, U.Schwingenschlögl, A.Dimoulas: Annalen der Physik, 2012, 524[3-4], 123-32