Edge misfit dislocations formed as result of reactions between 60° glissile threading dislocations and 60° misfit dislocations lying on an intersecting glide plane were found in strained GeSi-on-Si(001) and Ge-on-InGaAs/GaAs films. It was demonstrated that dislocations penetrating from the InGaAs buffer layer to the strained Ge film could provoke formation of not only 60° misfit dislocations, but also edge misfit dislocations on the interface even at minor mismatch of the lattice parameters of the film and the InGaAs/GaAs virtual substrate.

Role of Cross-Slipping in Formation of Edge Dislocations in Heteroepitaxial Systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs. Y.B.Bolkhovityanov, A.S.Deryabin, A.K.Gutakovskii, L.V.Sokolov: Philosophical Magazine Letters, 2011, 91[7], 458-64