An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 1017/cm3, typical of HgCdTe. The concentration of residual donors was found to be quite low ((3-8) x 1014/cm3). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects could be annealed in He atmosphere at 230C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals.

Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy on Si Substrates. I.I.Izhnin, A.I.Izhnin, H.V.Savytskyy, M.M.Vakiv, Y.M.Stakhira, O.E.Fitsych, M.V.Yakushev, A.V.Sorochkin, I.V.Sabinina, S.A.Dvoretsky, Y.G.Sidorov, V.S.Varavin, M.Pociask-Bialy, K.D.Mynbaev: Semiconductor Science and Technology, 2012, 27[3], 035001