Taking elastic anisotropy into consideration, a dislocation position dependent model was used to calculate the preferential formation site of the pure edge and 60° mixed dislocation segment in different shaped InAs/GaAs quantum dots. From the result, it was clear that for the pure edge dislocations the most energy favourable position was always the base center of the quantum dots. While as to the 60° mixed dislocations, the positions near to the edge of the quantum dot base were the energy favourable area and the exact position was changed with different aspect ratio of the quantum dot.

The Preferential Formation Site of Dislocations in InAs/GaAs Quantum Dots. S.Zhou, Y.Liu, D.Wang, X.Xin, G.Cao, P.Lu, Z.Yu: Superlattices and Microstructures, 2012, 51[1], 53-61