Hall mobilities of InN and In1−xGaxN were calculated by using an iterative method. All important scattering mechanisms were taken into account in the calculations. The effect of dislocation scattering upon the Hall mobility of InN at a carrier concentration of 1017/cm3 was investigated at 30 to 600K. The Hall mobility of InN decreased with increasing dislocation density. Both the dislocation and alloy disorder scattering dependence upon mobility in In1−xGaxN were examined as x varied from 0.0 to 1.0 at 77 and 300K. It was observed that the Hall mobility of In1−xGaxN decreased up to x = 0.3 at 300K and up to x = 0.5 at 77K because of dislocation scattering.

InN and ln1−xGaxN: Calculation of Hall Mobilities and Effects of Alloy Disorder and Dislocation Scatterings. S.Aydogu, M.Akarsu, O.Ozbas: Materials Science in Semiconductor Processing, 2012, 15[4], 347-52