Cathodoluminescence was used to study the onset of mechanical stress relaxation in low indium composition semi-polar (11•2) InxGa1−xN lattice-mismatched layers grown on bulk GaN substrates. Monochromatic cathodoluminescence of short interfacial misfit dislocation segments showed a single threading dislocation associated with each misfit dislocation segment—demonstrating that the initial stage of misfit dislocation formation in semi-polar III-nitride heterostructures proceeded by the bending and glide of pre-existing misfit dislocations on the (00•1) slip plane. The state of coherency as determined by panchromatic cathodoluminescence was also compared to that determined by X-ray diffraction analysis based on crystallographic epilayer tilt and Matthew-Blakeslee’s critical thickness calculations.Misfit Dislocation Formation via Pre-Existing Threading Dislocation Glide in (11¯22) Semipolar Heteroepitaxy. P.S.Hsu, E.C.Young, A.E.Romanov, K.Fujito, S.P.DenBaars, S.Nakamura, J.S.Speck: Applied Physics Letters, 2011, 99[8], 081912