InGaN nano-flowers were self-assembled on GaN by metal organic vapour phase epitaxy. Scanning electron microscopy and transmission electron microscopy photos showed the nano-flower structure was formed through InGaN quantum dots aggregating around the exposure site of the edge dislocation extending to the surface. Calculation on the strain states indicated that the edge dislocation could generate lateral tensile and compressive strain regions on the surface, but the screw dislocation cannot. And the tensile strain regions were corresponding to the shape of the nano-flower. This was attributed to that the tensile GaN lattices on surface were easy to attract adatoms to form InGaN quantum dots.

Edge Dislocation Induced Self-Assembly of InGaN Nano-Flower on GaN by Metal Organic Vapor Phase Epitaxy. W.Zhao, L.Wang, J.Wang, Z.Hao, Y.Luo: Journal of Applied Physics, 2011, 110[1], 014311