Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2μm-thick InN film grown by molecular beam epitaxy were characterized by Rutherford back-scattering/channelling and synchrotron radiation X-ray diffraction. The minimum yield χmin = 2.5% deduced from the Rutherford back-scattering/channelling results indicated a fairly good crystalline quality. From the synchrotron radiation X-ray diffraction results were obtained values of the screw and edge densities to be ρscrew = 7.0027 x 109 and ρedge = 8.6115 x 109/cm2, respectively. The tetragonal distortion of the sample was found to be -0.27% by angular scans, which was close to the −0.28% derived by synchrotron radiation X-ray diffraction. The value of |e⊥/e∥| = 0.6742 implied that the InN layer was much stiffer along the a axis than that along the c axis, where e∥ was the parallel elastic strain, and e⊥ was the perpendicular elastic strain. Photoluminescence results revealed a main peak of 0.653eV with the linewidth of 60meV, additional shoulder band could be due to impurities and related defects.

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling. F.F.Cheng, F.Tao, X.Q.Wang, S.D.Yao: Chinese Physics Letters, 2012, 29[2], 026101