The enhanced structural mismatch of InN and GaN binary alloys led to almost spontaneous formation of misfit dislocations at the corresponding interfaces, thereby accommodating plastic relaxation. The open issue of the misfit dislocations array in-plane configuration was addressed through a combination of high-resolution transmission electron microscopic observations with energetic mapping and high-resolution transmission electron microscopic image simulation of InN/GaN interfaces extracted by atomistic modelling. Energetic mapping on the interfacial area of InN/GaN super-cells relaxed by the Tersoff interatomic potential, indicated that the misfit dislocations arrays adopted <11•0> line directions and their Burgers vectors were b = 1/3<2¯1•0> high-resolution transmission electron microscopic image simulations further revealed that the local arrangement of Moiré fringes observed in these interfaces depended strongly on the thickness of the TEM foil, thus resolving contradictory experimental reports. Geometric phase analysis of the simulated images justified the results obtained by energetic mapping.Atomistic Modeling and HRTEM Analysis of Misfit Dislocations in InN/GaN Heterostructures. J.Kioseoglou, E.Kalesaki, G.P.Dimitrakopulos, T.Kehagias, P.Komninou, T.Karakostas: Applied Surface Science, 2012, 260, 23-28