Proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells was studied and compared with InGaAsP/InGaAs quantum wells. The various interdiffusion results obtained from the two quantum well structures were compared and discussed based upon thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.

Investigation of Ion Implantation Induced Intermixing in InP Based Quaternary Quantum Wells. S.C.Du, L.Fu, H.H.Tan, C.Jagadish: Journal of Physics D, 2011, 44[47], 475105