The interplay between crystal phase purity and radial growth in InP nanowires was investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density could be controllably introduced into wurtzite nanowires. It was found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires were then grown which exhibited narrow 4.2K photoluminescence linewidths of 3.7meV and 1.490meV, and no evidence of emission related to stacking faults or zincblende insertions.

Interplay between Crystal Phase Purity and Radial Growth in InP Nanowires. P.J.Poole, D.Dalacu, X.Wu, J.Lapointe, K.Mnaymneh: Nanotechnology, 2012, 23[38], 385205