The bonding and diffusion behaviour of nitrogen incorporated into InSb wafer by two-step implantation was studied. Three nitrogen-containing regions (a surface accumulation region, a uniform region and a tail region) were observed in the samples after post annealing. X-ray photo-electron spectroscopy measurements at different depths revealed that majority of the nitrogen forms In-N bonds in the uniform region but exists as interstitial defects in the tail region. The diffusion coefficients of nitrogen in InSb were obtained by fitting the modified Fick’s law with experimental data and the activation energy of 0.55eV extracted confirms the interstitial dominating diffusion of nitrogen in the InSb wafer.

Bonding and Diffusion of Nitrogen in the InSbN Alloys Fabricated by Two-Step Ion Implantation. Y.Wang, D.H.Zhang, X.Z.Chen, Y.J.Jin, J.H.Li, C.J.Liu, A.T.S.Wee, S.Zhang, A.Ramam: Applied Physics Letters, 2012, 101[2], 021905