The diffusion of hydrogen in amorphous silicon formed by ion implantation was studied using real-time elastic recoil detection analysis. An activation energy for H diffusion of 1.82eV was determined in a single ramped anneal. This activation energy was consistent with diffusion studies in the high H concentration regime. The low beam current employed was found to have a negligible influence on the H diffusion within the sensitivity of the measurement. Further refinements for increased accuracy of this technique were considered.

Real-time in situ Study of Hydrogen Diffusion in Amorphous Si Formed by Ion Implantation. D.Smeets, B.C.Johnson, J.C.McCallum, C.M.Comrie: Nuclear Instruments and Methods in Physics Research B, 2011, 269[22], 2657-61