The behaviours of light-induced degradation using quasi-single-crystalline silicon were demonstrated. It was found that the dislocations, the main defect in quasi-single-crystalline silicon, could significantly influence the generation kinetics of B-O complexes that were responsible for the light-induced degradation effect. Compared to dislocation-poor samples, higher activation energy of 0.57eV for the B-O complex generation in dislocation-rich silicon was obtained, and meanwhile, the pre-exponential factor was two orders of magnitude higher. It was believed that the dislocation-related electronic states charged with holes could cause an energy potential barrier for the capture of single-positive holes that was required for the transformation of B-O complexes from latent centers to immediate transient centers.

Dislocation-Induced Variation of Generation Kinetics of Boron-Oxygen Complexes in Silicon. X.Gu, S.Yuan, X.Yu, K.Guo, D.Yang: Journal of Crystal Growth, 2012, 359, 69-71