A kinetic model of the formation and growth of dislocation loops in course of consequent as-grown crystal's cooling was proposed It demonstrated that dislocation loops were formed following the processes of high-temperature precipitation of background oxygen and carbon impurities during crystal growth. Elastic deformation caused by growing precipitate was released due to the formation and growth of dislocation loops. Interstitial dislocation loops were formed, when the crystal growth ratio was Vg/G<ξcrit. The kinetic model calculation data were compared with experimental research findings related to the formation of dislocation loops

A Kinetic Model of the Formation and Growth of Interstitial Dislocation Loops in Dislocation Free Silicon Single Crystals. V.I.Talanin, I.E.Talanin: Journal of Crystal Growth, 2012, 346[1], 45-9