Photoluminescence in the 1.5 to 1.6μm wavelength region from dislocation-rich Si layers grown using the oxidized Si surfaces was studied. The obtained excitation dependences of the photoluminescence intensities were interpreted on the base of a model of the electronic structure that consisted of the shallow dislocation-induced conduction sub-band and deep levels located about 0.3eV above the valence band edge. At low temperature and low excitation conditions the dependences were described well by means of the Shockley-Read-Hall statistics for the carrier recombination via deep states. The photoluminescence data at high excitation conditions suggested that the dominating process that limits the increase in the excess carrier concentration was Auger recombination in which one of three carriers involved into the recombination event was from the deep states. A blue shift of the dislocation-related photoluminescence peak with increasing excitation intensity was observed, which was associated with changes in the occupancy of the deep states.

Excitation Dependence of Photoluminescence in the 1.5-1.6 μm Wavelength Region from Grown Dislocation-Rich Si Layers. A.A.Shklyaev, A.V.Latyshev, M.Ichikawa: Physics Procedia, 2012, 32, 117-26