The 0.78eV line of the dislocation related luminescence in the electron-irradiated silicon was investigated. It was found that the 0.78eV line only exists in float zone silicon samples, and its intensity could be largely enhanced by high temperature and long time annealing while no 0.78eV line was found in Czochralski silicon. The activation energy of 0.78eV line in floating-zone silicon was about 13meV, indicating a different nature from that of D1/D2 lines which could be ascribed to specific reconstructed dislocations which could be easily affected by point defects and temperature.

The Origin of 0.78eV Line of the Dislocation Related Luminescence in Silicon. L.Xiang, D.Li, L.Jin, B.Pivac, D.Yang: Journal of Applied Physics, 2012, 112[6], 063528