An experimental study of the correlation between dislocations, grain orientation, and grain boundaries in multicrystalline silicon (mc-Si) bulk crystals was presented. Selected mc-Si samples revealing typical structural patterns like clustering or line-up of dislocations in the vicinity of grain boundaries were measured by electron back-scattering diffraction. The orientation of dislocation slip planes and twin boundary planes as well as the relationship between the misorientation of neighbouring grains and the spatial alignment of dislocations were analyzed on the basis of the relevant pole figures calculated from electron back-scattering diffraction scans. The effect of grain boundaries on the behaviour of dislocations seemed to be related to the presence or absence of a common slip system on both sides of the boundary and hence, to the type of lattice misorientation between involved grains.The Correlation between Spatial Alignment of Dislocations, Grain Orientation, and Grain Boundaries in Multicrystalline Silicon. E.Schmid, S.Würzner, C.Funke, T.Behm, R.Helbig, O.Pätzold, H.Berek, M.Stelter: Crystal Research and Technology, 2012, 47[3], 229-36