The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. The growing interface was directly observed and changes in the growth rate were analyzed. It was found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and rarely formed when the growth rate was constant at a high value. The formation mechanism was discussed from the viewpoint of driving force.

Formation Mechanism of Twin Boundaries during Crystal Growth of Silicon. K.Kutsukake, T.Abe, N.Usami, K.Fujiwara, K.Morishita, K.Nakajima: Scripta Materialia, 2011, 65[6], 556-9