Topological interactions between shallow impurities and dislocations were studied with regard to the violation of the topological structure of a crystalline lattice by the dislocations. The interaction resulted in a topological gauge field that was confined within the dislocation cores, but which influenced shallow impurity states in the vicinity of dislocations via a sort of Aharonov-Bohm effect. It was found that this effect reduced the binding energies of shallow centers that were localized at non-split dislocations. In the case of split dislocations, the interaction of shallow-level centers with the stacking fault stretched between partial dislocations was important. It was taken into account on the basis of the δ-potential quantum-well model for stacking faults.

Topological Interaction of Shallow-Level Centers with Dislocations in Semiconductors. Y.T.Rebane: Physica Status Solidi B, 1998, 210[2], 269-72